Etude et simulation des paramètres technologiques et électriques des structures réalisées à base de composés nitrurés.

Abstract

In recent years, the III-nitride semiconductor and especially gallium nitride (GaN) has attracted much attention due to several advantages over silicon (Si) as the wide band gap, reasonable electron mobility, a high breakdown field and high chemical stability have allowed this system to be a good candidate materials for microwave applications of high power and high temperature. The demonstration of the first high electron mobility transistor (HEMT) based on a heterostructure AlGaN / GaN has confirmed the great potential tipped to this sector. However, the great advantages of HEMTs technology to basic heterostructure AlGaN / GaN have not yet been fully exploited, despite the start of the mass marketing of these components. The reason is that several aspects related to the reliability of the transistors are being improved. In this work, a simulation of a HEMT AlGaN / GaN is given. By varying parameters such as the thickness of the AlGaN barrier layer and the donor layer AlGaN and its doping profile and the gate- source distance, drain-source and gate length. And the molar fraction x of aluminum in the AlGaN. To better understand the role of each of the layers of the structure, as well as their impact on its performance in static and dynamic conditions.

Résumé (Français et/ou Anglais) :

In recent years, the III-nitride semiconductor and especially gallium nitride (GaN) has attracted much attention due to several advantages over silicon (Si) as the wide band gap, reasonable electron mobility, a high breakdown field and high chemical stability have allowed this system to be a good candidate materials for microwave applications of high power and high temperature. The demonstration of the first high electron mobility transistor (HEMT) based on a heterostructure AlGaN / GaN has confirmed the great potential tipped to this sector. However, the great advantages of HEMTs technology to basic heterostructure AlGaN / GaN have not yet been fully exploited, despite the start of the mass marketing of these components. The reason is that several aspects related to the reliability of the transistors are being improved.

In this work, a simulation of a HEMT AlGaN / GaN is given. By varying parameters such as the thickness of the AlGaN barrier layer and the donor layer AlGaN and its doping profile and the gate- source distance, drain-source and gate length. And the molar fraction x of aluminum in the AlGaN. To better understand the role of each of the layers of the structure, as well as their impact on its performance in static and dynamic conditions.