Etude et optimisation des diodes lasers à base de la structure à puits quantiques BxAl1-x N /AlN

Abstract

This work consists being studied of the properties electronic and optical of the laser diode BAlN/AlN. The objective of this work is to contribute a share in the field of the study of the electronic structures of the materials containing nitride and boron which are significant when designing device of optoelectronics. This contribution milked in the first stage the calculation of the structures of tapes electronic of the ternary alloy BAlN and binary AlN in question with an aim of studying the parameter of curvature which has a direct effect on the optical properties of material. The method of calculation used is that of the empirical pseudopotential. The second stage consists in making the optimization of the structure suggested (BAlN/AlN) by using the graphic method with the Mathcad software. The physical parameters of the diode to be optimized are: intrinsic and extrinsic parameters influencing the structure (gap, parameter of curvature, index of refraction, gain, density of current of threshold, temperature...). This study gift a better comprehension on is electronic and optical properties materials studied as well as the device proposed. This study will be confronted with other experimental and theoretical work.