Simulation de la conduction dans les dispositifs à semiconducteurs à durée de vie et à relaxation, comparaison des caractéristiques I(V) Nom et Prénom de l'encad

Abstract

Our objectif consists in creating a 3D three-dimensional simulator conceived for the study of components with low geometry of conception, allows determining in the volume of a structure, the distributions of potential and the densities of free carries according to a given polarization, by resolution of Poisson ‘s equation as well as both equations of continuity. The initial version can simulate components based on lifetime semiconductor. Our work consists in making a comparison between lifetime and relaxation semiconductors in the conduction mode, with the aim of creating a more developed simulator. We consider the case corresponding to two values very different from diffusion lifetime τ0 which is a measure of the life expectancy in diet of transport, corresponding to two different semiconductor, lifetime and relaxation SC. The method of resolution consists of a linearization of the equations of transport by the method of a finite difference. The algorithm adapted to the resolution of the not linear equations and strongly coupled ensuing from the physical model is the one of Newton Raphson, However to allow better one convergence and consequently an improvement in the weather of 3D calculation often prohibitive, a combined method, integrating at the same time the algorithm of Newton and that of Gummel was finalized. The tests of simulation for the validation of the model are made on the long diodes of type PIN.